sot-23-6l plastic-encapsulate transistors cj l 818 c transistor (pnp) descriptions the device is man u factured in lo w voltage pnp planar t echnology with " base island layout. the resulting t ransistor shows exceptional high gain performance coupled with very low saturation voltage. feature very low collector to emitter saturation voltage applications z power management in portable equipments z switching regulator in bat tery charge applications 6 1 marking: maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous - 2 a p c collector power dissipation 0.35 w r ja thermal resistance from junction to ambient 357 /w t j junction temperature 150 t stg storage temperature -55~+150 so t -23-6l 818c p tot total dissipation at t c = 25 (note 1) 1 w r jc thermal resistance from junction to c ase (note 1) 1 25 /w note 1 package mounted on fr4 pcb 25mm x 25mm. i c m collector current - pulsed - 3 a 1 of 2 sales@zpsemi.com www.zpsemi.com cj l 818 c a,feb,2014
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo * i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a ,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a v ce =-1v, i c =-0.5a 100 300 dc current gain h fe * v ce =-3v, i c =-2a 80 i c =-0.5a,i b =- 10 ma -0.1 8 v collector-emitter saturation voltage v ce(sat) * i c =-2a,i b =-20 0 ma -0. 35 v i c =-0.5a,i b =-5ma -1.1 v i c =-1.2a,i b =-12ma -1.1 v bade-emitter saturation voltage v be(sat) * i c =-2a,i b =-20ma -1.2 v base-emitter on voltage v be(on) * i c =-0.5a, v ce =-2v -1 v *pulse test: pulse width 300us,duty cycle 2.0%. 2 of 2 sales@zpsemi.com www.zpsemi.com cj l 818 c a,feb,2014
|
